文献
J-GLOBAL ID:202202259774165340
整理番号:22A0430744
ペロブスカイト/ホール輸送層界面のペロブスカイトおよび価電子帯オフセットの単一バンドギャップ勾配の太陽電池性能への理論的影響【JST・京大機械翻訳】
Theoretical impacts of single band gap grading of perovskite and valence band offset of perovskite/hole transport layer interface on its solar cell performances
著者 (6件):
Kawano Yu
(Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan)
,
Chantana Jakapan
(Research Organization of Science and Technology, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan)
,
Negami Takayuki
(Research Organization of Science and Technology, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan)
,
Nishimura Takahito
(Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan)
,
Mavlonov Abdurashid
(Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan)
,
Minemoto Takashi
(Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan)
資料名:
Solar Energy
(Solar Energy)
巻:
231
ページ:
684-693
発行年:
2022年
JST資料番号:
E0099A
ISSN:
0038-092X
CODEN:
SRENA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)