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J-GLOBAL ID：202202261095734856
整理番号：22A0958363
触媒金属粒子による六方晶窒化ホウ素上の高アスペクト比ナノトレンチのための指向性エッチング【JST・京大機械翻訳】
Directional etching for high aspect ratio nano-trenches on hexagonal boron nitride by catalytic metal particles
Chen Chen
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China)
,
Chen Chen
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China)
,
Chen Chen
(CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China)
,
He Li
(School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, People’s Republic of China)
,
Jiang Chengxin
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China)
,
Jiang Chengxin
(School of Physical Science and Technology, ShanghaiTech University, Shanghai, People’s Republic of China)
,
Chen Lingxiu
(School of Materials Science and Physics, China University of Mining and Technology, Xuzhou, People’s Republic of China)
,
Wang Hui Shan
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China)
,
Wang Hui Shan
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China)
,
Wang Hui Shan
(CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China)
,
Wang Xiujun
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China)
,
Wang Xiujun
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China)
,
Wang Xiujun
(CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China)
,
Kong Ziqiang
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China)
,
Kong Ziqiang
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China)
,
Kong Ziqiang
(CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China)
,
Mu Xiaojing
(Key Laboratory of Optoelectronic Technology and Systems Ministry of Education International R & D Center of Micro-Nano Systems and New Materials Technology, Chongqing University, Chongqing, People’s Republic of China)
,
Wei Zhipeng
(State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, People’s Republic of China)
,
Watanabe Kenji
(National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan)
,
Taniguchi Takashi
(National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan)
,
Wu Tianru
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China)
,
Wu Tianru
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China)
,
Wu Tianru
(CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China)
,
Zhang Daoli
(School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, People’s Republic of China)
,
Wang Haomin
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, People’s Republic of China)
,
Wang Haomin
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, People’s Republic of China)
,
Wang Haomin
(CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, People’s Republic of China)
資料名：
2D Materials
(2D Materials)
巻： 9 号： 2 ページ： 025015 (6pp) 発行年： 2022年
JST資料番号： W5550A ISSN： 2053-1583 資料種別： 逐次刊行物 (A)
記事区分： 原著論文 発行国： イギリス (GBR) 言語： 英語 (EN)
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