文献
J-GLOBAL ID:202202262590051897
整理番号:22A0694702
マグネトロンスパッタリングにより堆積したMg_3Bi_2薄膜のエピタキシャル成長と熱電特性【JST・京大機械翻訳】
Epitaxial growth and thermoelectric properties of Mg3Bi2 thin films deposited by magnetron sputtering
著者 (8件):
Sadowski Grzegorz
(Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linkoping University, Linkoping SE-581 83, Sweden)
,
Zhu Yongbin
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China)
,
Shu Rui
(Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linkoping University, Linkoping SE-581 83, Sweden)
,
Feng Tao
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China)
,
le Febvrier Arnaud
(Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linkoping University, Linkoping SE-581 83, Sweden)
,
Music Denis
(Department of Materials Science and Applied Mathematics, Malmo University, Malmo SE-205 06, Sweden)
,
Liu Weishu
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China)
,
Eklund Per
(Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linkoping University, Linkoping SE-581 83, Sweden)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
120
号:
5
ページ:
051901-051901-6
発行年:
2022年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)