文献
J-GLOBAL ID:202202263169892838
整理番号:22A1101591
0.18μm CMOSプロセスにおける高次温度補償によるサブ1/°Cバンドギャップ電圧基準【JST・京大機械翻訳】
A Sub-1/°C Bandgap Voltage Reference With High-Order Temperature Compensation in 0.18-μm CMOS Process
著者 (7件):
Huang Shalin
(Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), Chongqing, China)
,
Li Mingdong
(Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), Chongqing, China)
,
Li Huan
(Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), Chongqing, China)
,
Yin Peng
(Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), Chongqing, China)
,
Shu Zhou
(Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), Chongqing, China)
,
Bermak Amine
(College of Science and Engineering, Hamad Bin Khalifa University, Doha, Qatar)
,
Tang Fang
(Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), Chongqing, China)
資料名:
IEEE Transactions on Circuits and Systems 1: Regular Papers
(IEEE Transactions on Circuits and Systems 1: Regular Papers)
巻:
69
号:
4
ページ:
1408-1416
発行年:
2022年
JST資料番号:
C0226B
ISSN:
1549-8328
CODEN:
ITCSCH
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)