文献
J-GLOBAL ID:202202264309546436
整理番号:22A1163713
トップゲート自己整合二重層非晶質InGaZnO TFTにおける移動度増強と異常ハンプ【JST・京大機械翻訳】
Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs
著者 (9件):
Lee Ming-Xuan
(Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan)
,
Chiu Jih-Chao
(Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan)
,
Li Song-Ling
(Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan)
,
Sarkar Eknath
(Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan)
,
Chen Yu-Ciao
(Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan)
,
Yen Chia-Chun
(Technology Integration Department I, Innolux Corporation, Tainan, Taiwan)
,
Chen Tsang-Long
(Technology Integration Department I, Innolux Corporation, Tainan, Taiwan)
,
Chou Cheng-Hsu
(Technology Development Division Group II, Innolux Corporation, Tainan, Taiwan)
,
Liu C. W.
(Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan)
資料名:
IEEE Journal of the Electron Devices Society
(IEEE Journal of the Electron Devices Society)
巻:
10
ページ:
301-308
発行年:
2022年
JST資料番号:
W2429A
ISSN:
2168-6734
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)