文献
J-GLOBAL ID:202202264590510728
整理番号:22A1094847
P型ドーピングゾーンとリセスバッファー層を持つ新しい4H-SiC MESFET【JST・京大機械翻訳】
A novel 4H-SiC MESFET with P-type doping zone and recessed buffer layer
著者 (7件):
Jia Hujun
(School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zhang Yunfan
(School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zhu Shunwei
(School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Wang Huan
(School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Wang Xiaoyu
(School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Liang Hua
(School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Yang Yintang
(School of Microelectronics, Xidian University, Xi’an, 710071, China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
144
ページ:
Null
発行年:
2022年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)