文献
J-GLOBAL ID:202202265445192239
整理番号:22A0389021
中性ビームエッチングによるEUVレジスト損傷の低減【JST・京大機械翻訳】
Reduction of EUV resist damage by neutral beam etching
著者 (6件):
Kim Gyo Wun
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea)
,
Chang Won Jun
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea)
,
Kang Ji Eun
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea)
,
Kim Hee Ju
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea)
,
Yeom Geun Young
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea)
,
Yeom Geun Young
(SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea)
資料名:
Nanotechnology
(Nanotechnology)
巻:
33
号:
9
ページ:
095301 (8pp)
発行年:
2022年
JST資料番号:
W0108A
ISSN:
0957-4484
CODEN:
NNOTER
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)