文献
J-GLOBAL ID:202202265620611542
整理番号:22A1090004
n型リンドープキャストモノライクシリコンの結晶成長と抵抗率変調【JST・京大機械翻訳】
Crystal growth and resistivity modulation of n-type phosphorus-doped cast mono-like silicon
著者 (9件):
Huang Jie
(State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China)
,
Yu Xuegong
(State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China)
,
Hu Dongli
(Jiangsu Key Lab of Silicon Based Electronic Materials, Jiangsu GCL Silicon Material Technology Development Co., Ltd., No. 88 Yangshan Road, Xuzhou Economic Development Zone, Xuzhou 221000, PR China)
,
Hu Dongli
(School of Biological and Chemical Engineering, NingboTech University, Ningbo 315100, PR China)
,
Yuan Shuai
(State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China)
,
Chen Hongrong
(Jiangsu Key Lab of Silicon Based Electronic Materials, Jiangsu GCL Silicon Material Technology Development Co., Ltd., No. 88 Yangshan Road, Xuzhou Economic Development Zone, Xuzhou 221000, PR China)
,
Wu Peng
(Jiangsu Key Lab of Silicon Based Electronic Materials, Jiangsu GCL Silicon Material Technology Development Co., Ltd., No. 88 Yangshan Road, Xuzhou Economic Development Zone, Xuzhou 221000, PR China)
,
Wang Lei
(State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China)
,
Yang Deren
(State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China)
資料名:
Solar Energy
(Solar Energy)
巻:
236
ページ:
294-300
発行年:
2022年
JST資料番号:
E0099A
ISSN:
0038-092X
CODEN:
SRENA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)