文献
J-GLOBAL ID:202202267453651609
整理番号:22A0441850
不均一Ni/Au/4H-SiC Schottkyダイオードの電気的挙動の温度依存性【JST・京大機械翻訳】
Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H-SiC Schottky diodes
著者 (4件):
Osvald J.
(Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 841 04, Bratislava, Slovakia)
,
Hrubcin L.
(Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 841 04, Bratislava, Slovakia)
,
Hrubcin L.
(Joint Institute for Nuclear Research, Joliot Curie 6, RUS-141980, Dubna, Moscow Region, Russian Federation)
,
Zatko B.
(Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 841 04, Bratislava, Slovakia)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
140
ページ:
Null
発行年:
2022年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)