文献
J-GLOBAL ID:202202267984801728
整理番号:22A0396307
輝度ロバスト性を強化するための非キャリア注入マイクロLEDにおける広い動作電圧窓の達成【JST・京大機械翻訳】
Achieving Wide Operating Voltage Windows in Non-Carrier Injection Micro-LEDs for Enhancing Luminance Robustness
著者 (9件):
Chen Peiqi
(College of Physics and Information Engineering, Fuzhou University, Fuzhou, China)
,
Wang Kun
(College of Physics and Information Engineering, Fuzhou University, Fuzhou, China)
,
Chen Jingjing
(College of Physics and Information Engineering, Fuzhou University, Fuzhou, China)
,
Xu Hailong
(College of Physics and Information Engineering, Fuzhou University, Fuzhou, China)
,
Zhang Yongai
(College of Physics and Information Engineering, Fuzhou University, Fuzhou, China)
,
Wu Chaoxing
(College of Physics and Information Engineering, Fuzhou University, Fuzhou, China)
,
Zhou Xiongtu
(College of Physics and Information Engineering, Fuzhou University, Fuzhou, China)
,
Liu Zhiqiang
(Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Guo Tailiang
(College of Physics and Information Engineering, Fuzhou University, Fuzhou, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
69
号:
1
ページ:
212-215
発行年:
2022年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)