文献
J-GLOBAL ID:202202268459403848
整理番号:22A0779726
UIS応力下のGaN Eモードデバイスにおけるエネルギー損失の解析【JST・京大機械翻訳】
Analysis of Energy Loss in GaN E-Mode Devices Under UIS Stresses
著者 (7件):
Sun Ruize
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Lai Jingxue
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Liu Chao
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Chen Wanjun
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Chen Yiqiang
(Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China)
,
Li Zhaoji
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Zhang Bo
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
資料名:
IEEE Transactions on Power Electronics
(IEEE Transactions on Power Electronics)
巻:
37
号:
6
ページ:
6711-6719
発行年:
2022年
JST資料番号:
D0211B
ISSN:
0885-8993
CODEN:
ITPEE8
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)