文献
J-GLOBAL ID:202202269334415972
整理番号:22A0637265
2%以上の外部量子効率を持つ超小型5μm 2607nm InGaN Amberマイクロ発光ダイオードの実証【JST・京大機械翻訳】
Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%
著者 (12件):
Li Panpan
(Materials Department, University of California, Santa Barbara, California 93106, USA)
,
Li Hongjian
(Materials Department, University of California, Santa Barbara, California 93106, USA)
,
Yang Yunxuan
(Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA)
,
Zhang Haojun
(Materials Department, University of California, Santa Barbara, California 93106, USA)
,
Shapturenka Pavel
(Department of Chemical Engineering, University of California, Santa Barbara, California 93106, USA)
,
Wong Matthew
(Materials Department, University of California, Santa Barbara, California 93106, USA)
,
Lynsky Cheyenne
(Materials Department, University of California, Santa Barbara, California 93106, USA)
,
Iza Mike
(Materials Department, University of California, Santa Barbara, California 93106, USA)
,
Gordon Michael J.
(Department of Chemical Engineering, University of California, Santa Barbara, California 93106, USA)
,
Speck James S.
(Materials Department, University of California, Santa Barbara, California 93106, USA)
,
Nakamura Shuji
(Materials Department, University of California, Santa Barbara, California 93106, USA)
,
DenBaars Steven P.
(Materials Department, University of California, Santa Barbara, California 93106, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
120
号:
4
ページ:
041102-041102-4
発行年:
2022年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)