文献
J-GLOBAL ID:202202271134750752
整理番号:22A0856765
電子注入の抑制によるp型有機電界効果トランジスタのバイアスストレス安定性の改善【JST・京大機械翻訳】
Improving bias-stress stability of p-type organic field-effect transistors by suppressing electron injection
著者 (12件):
Guo Chunhua
(Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming, China)
,
Yang Zhenxin
(Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming, China)
,
Qin Lingping
(Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming, China)
,
Man Jiaxiu
(Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming, China)
,
Zhang Tao
(Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming, China)
,
Wang Deng-Ke
(Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming, China)
,
Wang Deng-Ke
(National Center for International Research on Photoelectric and Energy Materials, Yunnan University, Kunming, China)
,
Lu Zheng-Hong
(Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming, China)
,
Lu Zheng-Hong
(National Center for International Research on Photoelectric and Energy Materials, Yunnan University, Kunming, China)
,
Lu Zheng-Hong
(Department of Materials Science and Engineering, University of Toronto, Toronto, Canada)
,
Zhu Qiang
(Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming, China)
,
Zhu Qiang
(National Center for International Research on Photoelectric and Energy Materials, Yunnan University, Kunming, China)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
33
号:
7
ページ:
3726-3737
発行年:
2022年
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)