文献
J-GLOBAL ID:202202272528855223
整理番号:22A0924743
Er_2O_3/Al_2O_3の二層誘電体を有する垂直オフ水素終端ダイヤモンド電界効果トランジスタ【JST・京大機械翻訳】
Normally-off hydrogen-terminated diamond field effect transistor with a bilayer dielectric of Er2O3/Al2O3
著者 (18件):
Chang Chengdong
(Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China)
,
Chang Chengdong
(Key Lab for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China)
,
Chen Genqiang
(Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China)
,
Chen Genqiang
(Key Lab for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China)
,
Shao Guoqing
(Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China)
,
Shao Guoqing
(Key Lab for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China)
,
Wang Yanfeng
(Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China)
,
Wang Yanfeng
(Key Lab for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China)
,
Zhang Minghui
(Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China)
,
Zhang Minghui
(Key Lab for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China)
,
Su Jianing
(Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China)
,
Su Jianing
(Key Lab for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China)
,
Lin Fang
(Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China)
,
Lin Fang
(Key Lab for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China)
,
Wang Wei
(Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China)
,
Wang Wei
(Key Lab for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China)
,
Wang Hong-Xing
(Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China)
,
Wang Hong-Xing
(Key Lab for Physical Electronics and Devices, Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China)
資料名:
Diamond and Related Materials
(Diamond and Related Materials)
巻:
123
ページ:
Null
発行年:
2022年
JST資料番号:
W0498A
ISSN:
0925-9635
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)