文献
J-GLOBAL ID:202202272803803178
整理番号:22A0735560
高効率で安定な酸素還元反応のための窒素ドープグラフェンナノシート上に固定したリッチで被覆されていないFeN_x原子クラスタ【JST・京大機械翻訳】
Rich and uncovered FeNx atom clusters anchored on nitrogen-doped graphene nanosheets for highly efficient and stable oxygen reduction reaction
著者 (12件):
Liu Dawei
(School of Electronic Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Wang Bin
(School of Electronic Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Srinivas Katam
(School of Electronic Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Yu Bo
(School of Electronic Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Chen Xin
(School of Electronic Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Ma Fei
(School of Electronic Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Wang Xinqiang
(School of Electronic Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Zhang Xiaojuan
(School of Electronic Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Yang Dongxu
(School of Electronic Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Yang Dongxu
(Institute of Oxygen Supply, and college of Science, Tibet University, Lhasa 850000, PR China)
,
Chen Yuanfu
(School of Electronic Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Chen Yuanfu
(Institute of Oxygen Supply, and college of Science, Tibet University, Lhasa 850000, PR China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
901
ページ:
Null
発行年:
2022年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)