文献
J-GLOBAL ID:202202273177116954
整理番号:22A0891760
Sankaranarayanan-Ramasamyの一方向成長法を用いて成長したTGS結晶の電気抵抗と光電流による相転移の研究【JST・京大機械翻訳】
A study of the phase transition by the electrical resistivity and photocurrent on TGS crystal grown using the unidirectional growth method of Sankaranarayanan-Ramasamy
著者 (7件):
Singaravadivelu S.
(Department of Physics, Sri Sivasubramaniya Nadar College of Engineering (Autonomous), Kalavakkam, Tamil Nadu, India)
,
Uthayakumar A.
(Post Graduate and Research Department of Physics, Presidency College, Chennai (Autonomous), University of Madras, Chennai, Tamil Nadu, India)
,
Kamalesh T.
(Research Center, Sri Sivasubramaniya Nadar College of Engineering (Autonomous), Kalavakkam, Tamil Nadu, India)
,
Karuppasamy P.
(Research Center, Sri Sivasubramaniya Nadar College of Engineering (Autonomous), Kalavakkam, Tamil Nadu, India)
,
Chandra Balaji
(Research Center, Sri Sivasubramaniya Nadar College of Engineering (Autonomous), Kalavakkam, Tamil Nadu, India)
,
Pandian M. Senthil
(Research Center, Sri Sivasubramaniya Nadar College of Engineering (Autonomous), Kalavakkam, Tamil Nadu, India)
,
Ramasamy P.
(Research Center, Sri Sivasubramaniya Nadar College of Engineering (Autonomous), Kalavakkam, Tamil Nadu, India)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
33
号:
8
ページ:
5763-5775
発行年:
2022年
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)