文献
J-GLOBAL ID:202202273524478405
整理番号:22A0976427
不揮発性メモリデバイスに向けたシステイン官能化WS_2量子ドットにおける負性微分抵抗を伴う抵抗スイッチング【JST・京大機械翻訳】
Resistive Switching Accompanied by Negative Differential Resistance in Cysteine-Functionalized WS2 Quantum Dots toward Nonvolatile Memory Devices
著者 (8件):
Chen Yu-Ting
(Department of Physics and Centre for Nanotechnology, Chung Yuan Christian University, Taiwan)
,
Santiago Svette Reina Merden S.
(Department of Physics and Centre for Nanotechnology, Chung Yuan Christian University, Taiwan)
,
Sharma Sonia
(Department of Physics and Centre for Nanotechnology, Chung Yuan Christian University, Taiwan)
,
Wu Chii-Bin
(Department of Physics and Centre for Nanotechnology, Chung Yuan Christian University, Taiwan)
,
Chou Chih-Lung
(Department of Physics and Centre for Nanotechnology, Chung Yuan Christian University, Taiwan)
,
Chang Sheng Hsiung
(Department of Physics and Centre for Nanotechnology, Chung Yuan Christian University, Taiwan)
,
Chiu Kuan-Cheng
(Department of Physics and Centre for Nanotechnology, Chung Yuan Christian University, Taiwan)
,
Shen Ji-Lin
(Department of Physics and Centre for Nanotechnology, Chung Yuan Christian University, Taiwan)
資料名:
ACS Applied Nano Materials
(ACS Applied Nano Materials)
巻:
5
号:
2
ページ:
2250-2257
発行年:
2022年
JST資料番号:
W5033A
ISSN:
2574-0970
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)