文献
J-GLOBAL ID:202202273613523393
整理番号:22A1094856
任意のファセットを持つ原子平滑性へのSiCウエハ研磨の一般的戦略【JST・京大機械翻訳】
A general strategy for polishing SiC wafers to atomic smoothness with arbitrary facets
著者 (9件):
Ji Peixuan
(Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin, 300072, China)
,
Zhang Kaimin
(Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin, 300072, China)
,
Zhang Zhenzhen
(Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin, 300072, China)
,
Zhao Mei
(Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin, 300072, China)
,
Li Rui
(Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin, 300072, China)
,
Hao Danni
(Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin, 300072, China)
,
Moro Ramiro
(Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin, 300072, China)
,
Ma Yanqing
(Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin, 300072, China)
,
Ma Lei
(Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin, 300072, China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
144
ページ:
Null
発行年:
2022年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)