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J-GLOBAL ID：202202274356829344
整理番号：22A0973962
真空紫外光検出のための流速変調エピタクシーによりm面サファイア上に成長させた半極性(11-22)AlN【JST・京大機械翻訳】
Semipolar (11-22) AlN Grown on m-Plane Sapphire by Flow-Rate Modulation Epitaxy for Vacuum-Ultraviolet Photodetection
Yang Jiankun
(State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
Yang Jiankun
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Yang Jiankun
(Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China)
,
Gao Yaqi
(State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
Gao Yaqi
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Gao Yaqi
(Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China)
,
Zheng Wei
(State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, China)
,
He Rui
(State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
He Rui
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
He Rui
(Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China)
,
Huo Ziqiang
(State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
Huo Ziqiang
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Huo Ziqiang
(Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China)
,
Ji Xiaoli
(State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
Ji Xiaoli
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Ji Xiaoli
(Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China)
,
Ran Junxue
(State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
Ran Junxue
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Ran Junxue
(Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China)
,
Duan Ruifei
(State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
Duan Ruifei
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Duan Ruifei
(Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China)
,
Wang Junxi
(State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
Wang Junxi
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Wang Junxi
(Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China)
,
Li Jinmin
(State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
Li Jinmin
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Li Jinmin
(Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China)
,
Wei Tongbo
(State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
Wei Tongbo
(Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China)
,
Wei Tongbo
(Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China)
資料名：
Crystal Growth & Design
(Crystal Growth & Design)
巻： 22 号： 3 ページ： 1731-1737 発行年： 2022年
JST資料番号： W1323A ISSN： 1528-7483 CODEN： CGDEFU 資料種別： 逐次刊行物 (A)
記事区分： 原著論文 発行国： アメリカ合衆国 (USA) 言語： 英語 (EN)
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