文献
J-GLOBAL ID:202202274366347355
整理番号:22A0396672
a-InGaZnO薄膜トランジスタの動的自己加熱劣化におけるホットキャリアの役割【JST・京大機械翻訳】
Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors
著者 (9件):
Liu Fayang
(School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China)
,
Zhou Yuheng
(School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China)
,
Yang Huan
(School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China)
,
Zhou Xiaoliang
(School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China)
,
Zhang Xiaohui
(School of Materials Science and Engineering, South China University of Technology, Guangzhou, China)
,
Li Guijun
(Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China)
,
Zhang Meng
(College of Electronic and Information Engineering, Shenzhen University, Shenzhen, China)
,
Zhang Shengdong
(School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China)
,
Lu Lei
(School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
43
号:
1
ページ:
40-43
発行年:
2022年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)