文献
J-GLOBAL ID:202202274527882935
整理番号:22A1101600
拡大トンネル磁気抵抗比とユニバーサルSTT-MRAMセルを用いたアナログインメモリ計算の提案【JST・京大機械翻訳】
Proposal of Analog In-Memory Computing With Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell
著者 (7件):
Cai Hao
(National ASIC System Engineering Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China)
,
Guo Yanan
(National ASIC System Engineering Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China)
,
Liu Bo
(National ASIC System Engineering Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China)
,
Zhou Mingyang
(National ASIC System Engineering Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China)
,
Chen Juntong
(National ASIC System Engineering Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China)
,
Liu Xinning
(National ASIC System Engineering Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China)
,
Yang Jun
(National ASIC System Engineering Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China)
資料名:
IEEE Transactions on Circuits and Systems 1: Regular Papers
(IEEE Transactions on Circuits and Systems 1: Regular Papers)
巻:
69
号:
4
ページ:
1519-1531
発行年:
2022年
JST資料番号:
C0226B
ISSN:
1549-8328
CODEN:
ITCSCH
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)