文献
J-GLOBAL ID:202202275425015046
整理番号:22A1100878
Al_2O_3キャッピング層を用いた電極の影響から遊離したHf_0.5Zr_0.5O_2薄膜の強誘電性【JST・京大機械翻訳】
Ferroelectricity of Hf0.5Zr0.5O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers
著者 (6件):
Wan Jiaxian
(Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and the School of Physics and Technology, Wuhan University, Wuhan, China)
,
Chen Xue
(Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and the School of Physics and Technology, Wuhan University, Wuhan, China)
,
Ji Liwei
(Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and the School of Physics and Technology, Wuhan University, Wuhan, China)
,
Tu Zexin
(Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and the School of Physics and Technology, Wuhan University, Wuhan, China)
,
Wu Hao
(Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, the School of Physics and Technology, and the Hubei Key Laboratory of Nuclear Solid Physics, Wuhan University, Wuhan, China)
,
Liu Chang
(Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and the School of Physics and Technology, Wuhan University, Wuhan, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
69
号:
4
ページ:
1805-1810
発行年:
2022年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)