文献
J-GLOBAL ID:202202275986207975
整理番号:22A0956595
多層h-BN-オン-サファイアのサブバンドギャップ光ルミネセンス特性【JST・京大機械翻訳】
Sub-bandgap photoluminescence properties of multilayer h-BN-on-sapphire
著者 (10件):
Saha Shantanu
(Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, United States of America)
,
Chang Yu-Chen
(Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan)
,
Yang Tilo Hongwei
(Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan)
,
Rice Anthony
(Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185, United States of America)
,
Ghosh Arnob
(Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, United States of America)
,
You Weicheng
(Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, United States of America)
,
Crawford Mary
(Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185, United States of America)
,
Lu Ting-Hua
(Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan)
,
Lan Yann-Wen
(Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan)
,
Arafin Shamsul
(Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, United States of America)
資料名:
Nanotechnology
(Nanotechnology)
巻:
33
号:
21
ページ:
215702 (7pp)
発行年:
2022年
JST資料番号:
W0108A
ISSN:
0957-4484
CODEN:
NNOTER
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)