文献
J-GLOBAL ID:202202276062644053
整理番号:22A0958708
SiCパワーデバイスにおける重イオン誘起漏れ電流の解析【JST・京大機械翻訳】
Analysis of Heavy-Ion-Induced Leakage Current in SiC Power Devices
著者 (10件):
Johnson Robert A.
(Electrical Engineering and Computer Science Department, Vanderbilt University, Station B 351825, Nashville, TN, USA)
,
Witulski Arthur F.
(Electrical Engineering and Computer Science Department, Vanderbilt University, Station B 351825, Nashville, TN, USA)
,
Ball Dennis R.
(Electrical Engineering and Computer Science Department, Vanderbilt University, Station B 351825, Nashville, TN, USA)
,
Galloway Kenneth F.
(Electrical Engineering and Computer Science Department, Vanderbilt University, Station B 351825, Nashville, TN, USA)
,
Sternberg Andrew L.
(Electrical Engineering and Computer Science Department, Vanderbilt University, Station B 351825, Nashville, TN, USA)
,
Reed Robert A.
(Electrical Engineering and Computer Science Department, Vanderbilt University, Station B 351825, Nashville, TN, USA)
,
Schrimpf Ronald D.
(Electrical Engineering and Computer Science Department, Vanderbilt University, Station B 351825, Nashville, TN, USA)
,
Alles Michael L.
(Electrical Engineering and Computer Science Department, Vanderbilt University, Station B 351825, Nashville, TN, USA)
,
Lauenstein Jean-Marie
(NASA/GSFC, Code 561.4, Greenbelt, MD, USA)
,
Hutson John M.
(Electrical and Computer Engineering Department, Lipscomb University, Nashville, TN, USA)
資料名:
IEEE Transactions on Nuclear Science
(IEEE Transactions on Nuclear Science)
巻:
69
号:
3
ページ:
248-253
発行年:
2022年
JST資料番号:
C0235A
ISSN:
0018-9499
CODEN:
IETNAE
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)