文献
J-GLOBAL ID:202202276992908811
整理番号:22A0704685
誘電体層堆積によるグラフェン関連および基板関連Ramanモードの増強【JST・京大機械翻訳】
Enhancement of graphene-related and substrate-related Raman modes through dielectric layer deposition
著者 (6件):
Pietak Karolina
(Lukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotnikow 32/46, 02-668 Warsaw, Poland)
,
Jagiello Jakub
(Lukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotnikow 32/46, 02-668 Warsaw, Poland)
,
Dobrowolski Artur
(Lukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotnikow 32/46, 02-668 Warsaw, Poland)
,
Budzich Rafal
(Lukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotnikow 32/46, 02-668 Warsaw, Poland)
,
Wysmolek Andrzej
(Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland)
,
Ciuk Tymoteusz
(Lukasiewicz Research Network-Institute of Microelectronics and Photonics, Al. Lotnikow 32/46, 02-668 Warsaw, Poland)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
120
号:
6
ページ:
063105-063105-6
発行年:
2022年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)