文献
J-GLOBAL ID:202202277247712977
整理番号:22A0909429
取付具によるGaN高電子移動度トランジスタロードプル測定のためのボンディングワイヤ相互接続デエンベディング【JST・京大機械翻訳】
Bonding wire interconnection de-embedding for GaN high electron mobility transistor loadpull measurement with fixture
著者 (7件):
Wang Lu-Lu
(Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi’an 710024, China)
,
Fang Wen-Rao
(Department of Engineering Physics, Tsinghua University, Beijing 100084, China)
,
Huang Wen-Hua
(Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi’an 710024, China)
,
Li Jia-Wei
(Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi’an 710024, China)
,
Shao Hao
(Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi’an 710024, China)
,
Fu Chao
(Department of Engineering Physics, Tsinghua University, Beijing 100084, China)
,
He Tian-Wei
(Department of Engineering Physics, Tsinghua University, Beijing 100084, China)
資料名:
Review of Scientific Instruments
(Review of Scientific Instruments)
巻:
93
号:
2
ページ:
024706-024706-6
発行年:
2022年
JST資料番号:
D0517A
ISSN:
0034-6748
CODEN:
RSINAK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)