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J-GLOBAL ID：202202277249274563
整理番号：22A0796709
パルスMOCVDにより堆積したβ-Ga_2O_3膜に及ぼすO_2パルスの影響【JST・京大機械翻訳】
Influence of O2 pulse on the β-Ga2O3 films deposited by pulsed MOCVD
Zhang Tao
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zhang Tao
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Li Yifan
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Li Yifan
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Cheng Qian
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Cheng Qian
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Hu Zhiguo
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Hu Zhiguo
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Ma Jinbang
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Ma Jinbang
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Yao Yixin
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Yao Yixin
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zuo Yan
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zuo Yan
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Feng Qian
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Feng Qian
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zhang Yachao
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zhang Yachao
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zhou Hong
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zhou Hong
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Ning Jing
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Ning Jing
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zhang Chunfu
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zhang Chunfu
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zhang Jincheng
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zhang Jincheng
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Hao Yue
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Hao Yue
(Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071, China)
資料名：
Ceramics International
(Ceramics International)
巻： 48 号： 6 ページ： 8268-8275 発行年： 2022年
JST資料番号： H0705A ISSN： 0272-8842 資料種別： 逐次刊行物 (A)
記事区分： 原著論文 発行国： イギリス (GBR) 言語： 英語 (EN)
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