文献
J-GLOBAL ID:202202277273770025
整理番号:22A0911537
複雑なトポロジカルドメイン構造に埋め込まれた不揮発性強誘電分域壁メモリ【JST・京大機械翻訳】
Nonvolatile Ferroelectric-Domain-Wall Memory Embedded in a Complex Topological Domain Structure
著者 (16件):
Yang Wenda
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Tian Guo
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Fan Hua
(The Department of Physics, Southern University of Science and Technology, Shenzhen, 518000, China)
,
Zhao Yue
(The Department of Physics, Southern University of Science and Technology, Shenzhen, 518000, China)
,
Chen Hongying
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Zhang Luyong
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Wang Yadong
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Fan Zhen
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Hou Zhipeng
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Chen Deyang
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Gao Jinwei
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Zeng Min
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Lu Xubing
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Qin Minghui
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Gao Xingsen
(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China)
,
Liu Jun-Ming
(Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, 210093, China)
資料名:
Advanced Materials
(Advanced Materials)
巻:
34
号:
10
ページ:
e2107711
発行年:
2022年
JST資料番号:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)