文献
J-GLOBAL ID:202202277473281096
整理番号:22A0974772
二層構造を有する不揮発性高速スイッチングZn-O-N薄膜トランジスタ【JST・京大機械翻訳】
Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure
著者 (9件):
Kim Hyoung-Do
(Department of Materials Science and Engineering, Chungnam National University, Republic of Korea)
,
Naqi Muhammad
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Republic of Korea)
,
Jang Seong Cheol
(Department of Materials Science and Engineering, Chungnam National University, Republic of Korea)
,
Park Ji-Min
(Department of Materials Science and Engineering, Chungnam National University, Republic of Korea)
,
Park Yun Chang
(National Nano Fab Center, Republic of Korea)
,
Park Kyung
(Semiconductor Process Laboratory, WONIK IPS, Republic of Korea)
,
Nahm Ho-Hyun
(Department of Physics, Korea Advanced Institute of Science and Technology, Republic of Korea)
,
Kim Sunkook
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Republic of Korea)
,
Kim Hyun-Suk
(Department of Materials Science and Engineering, Chungnam National University, Republic of Korea)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
14
号:
11
ページ:
13490-13498
発行年:
2022年
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)