文献
J-GLOBAL ID:202202278244334274
整理番号:22A0707241
電子シナプス用の非対称GaN/ZnO人工抵抗メモリデバイス【JST・京大機械翻訳】
Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses
著者 (14件):
Khan Muhammad Umair
(Department of Ocean System Engineering, Jeju National University, Republic of Korea)
,
Khan Muhammad Umair
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Furqan Chaudhry Muhammad
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Furqan Chaudhry Muhammad
(State Key Laboratory on Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Hong Kong)
,
Kim Jungmin
(Department of Ocean System Engineering, Jeju National University, Republic of Korea)
,
Khan Sobia Ali
(School of Electronics Engineering, Chungbuk National University, South Korea)
,
Saqib Qazi Muhammad
(Department of Ocean System Engineering, Jeju National University, Republic of Korea)
,
Chougale Mahesh Y.
(Department of Ocean System Engineering, Jeju National University, Republic of Korea)
,
Shaukat Rayyan Ali
(Department of Ocean System Engineering, Jeju National University, Republic of Korea)
,
Kang Moon Hee
(School of Electronics Engineering, Chungbuk National University, South Korea)
,
Kobayashi Nobuhiko P.
(Baskin School of Engineering, University of California Santa Cruz, California, United States)
,
Bae Jinho
(Department of Ocean System Engineering, Jeju National University, Republic of Korea)
,
Kwok Hoi-Sing
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Kwok Hoi-Sing
(State Key Laboratory on Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Hong Kong)
資料名:
ACS Applied Electronic Materials
(ACS Applied Electronic Materials)
巻:
4
号:
1
ページ:
297-307
発行年:
2022年
JST資料番号:
W5669A
ISSN:
2637-6113
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)