文献
J-GLOBAL ID:202202278937347887
整理番号:22A0848242
二値化ニューラルネットワークのための変動耐性容量アレイ【JST・京大機械翻訳】
Variation-Tolerant Capacitive Array for Binarized Neural Network
著者 (6件):
Kim Hyeongsu
(Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea)
,
Woo Sung Yun
(Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea)
,
Lee Soochang
(Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea)
,
Seo Young-Tak
(Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea)
,
Park Byung-Gook
(Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea)
,
Lee Jong-Ho
(Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
43
号:
3
ページ:
478-481
発行年:
2022年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)