文献
J-GLOBAL ID:202202279500699886
整理番号:22A0974660
電極触媒窒素還元を強化するためのRh原子層修飾SnO_2ヘテロ構造の界面Electron制御【JST・京大機械翻訳】
Interfacial Electron Regulation of Rh Atomic Layer-Decorated SnO2 Heterostructures for Enhancing Electrocatalytic Nitrogen Reduction
著者 (8件):
Liu Yongqin
(College of Chemistry, Jilin University, Jilin, P. R. China)
,
Liu Yongqin
(State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Science, Jilin, P. R. China)
,
Huang Liang
(State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Science, Jilin, P. R. China)
,
Fang Youxing
(State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Science, Jilin, P. R. China)
,
Zhu Xinyang
(State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Science, Jilin, P. R. China)
,
Nan Jianli
(College of Chemistry, Jilin University, Jilin, P. R. China)
,
Dong Shaojun
(College of Chemistry, Jilin University, Jilin, P. R. China)
,
Dong Shaojun
(State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Science, Jilin, P. R. China)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
14
号:
10
ページ:
12304-12313
発行年:
2022年
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)