文献
J-GLOBAL ID:202202279865245006
整理番号:22A1100855
N_2Oガス吸着MnドープMoSe_2単分子層の増強された電子および磁気特性【JST・京大機械翻訳】
Enhanced Electronic and Magnetic Properties of N2O Gas Adsorbed Mn-Doped MoSe2 Monolayer
著者 (4件):
Mishra Neha
(Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology (MMMUT), Gorakhpur, Uttar Pradesh, India)
,
Pandey Bramha P.
(Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology (MMMUT), Gorakhpur, Uttar Pradesh, India)
,
Kumar Brijesh
(Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology (MMMUT), Gorakhpur, Uttar Pradesh, India)
,
Kumar Santosh
(Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
69
号:
4
ページ:
1634-1641
発行年:
2022年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)