文献
J-GLOBAL ID:202202279887875679
整理番号:22A1094852
ヘテロエピタキシャルβ-Ga_2O_3薄膜太陽ブラインド光検出器における酸素空孔の効果【JST・京大機械翻訳】
Effect of oxygen vacancies in heteroepitaxial β-Ga2O3 thin film solar blind photodetectors
著者 (7件):
Xu Rui
(School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, PR China)
,
Ma Xiaocui
(School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, PR China)
,
Chen Yanhui
(School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, PR China)
,
Mei Yang
(School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, PR China)
,
Ying Leiying
(School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, PR China)
,
Zhang Baoping
(School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, PR China)
,
Long Hao
(School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, PR China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
144
ページ:
Null
発行年:
2022年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)