文献
J-GLOBAL ID:202202280089671245
整理番号:22A1173153
その場X線光電子分光法研究:CVD成長三層MoS_2薄膜の内殻準位スペクトルに及ぼす不活性Arスパッタエッチングの効果【JST・京大機械翻訳】
In situ X-ray photoelectron spectroscopy study: effect of inert Ar sputter etching on the core-level spectra of the CVD-grown tri-layer MoS2 thin films
著者 (8件):
Jayaseelan V.
(Nanotechnology Research Centre (NRC), SRM Institute of Science and Technology (SRMIST), Chennai, India)
,
Jayaseelan V.
(2D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Chennai, India)
,
Kalaiezhily R. K.
(Nanotechnology Research Centre (NRC), SRM Institute of Science and Technology (SRMIST), Chennai, India)
,
Shinde Nitin Babu
(2D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Chennai, India)
,
Kamala Bharathi K.
(Nanotechnology Research Centre (NRC), SRM Institute of Science and Technology (SRMIST), Chennai, India)
,
Navaneethan M.
(Nanotechnology Research Centre (NRC), SRM Institute of Science and Technology (SRMIST), Chennai, India)
,
Eswaran Senthil Kumar
(Nanotechnology Research Centre (NRC), SRM Institute of Science and Technology (SRMIST), Chennai, India)
,
Eswaran Senthil Kumar
(2D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Chennai, India)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
33
号:
11
ページ:
8741-8746
発行年:
2022年
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)