文献
J-GLOBAL ID:202202280768803049
整理番号:22A0924611
可視範囲および自己出力二層p-Si/n-Bi_2S_3ヘテロ接合光検出器:オプトエレクトロニクス性能に対するAuバッファ層の効果【JST・京大機械翻訳】
Visible-range and self-powered bilayer p-Si/n-Bi2S3 heterojunction photodetector: The effect of Au buffer layer on the optoelectronics performance
著者 (3件):
Zamani Maryam
(Department of Physics, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran)
,
Jamali-Sheini Farid
(Advanced Surface Engineering and Nano Materials Research Center, Department of Physics, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran)
,
Cheraghizade Mohsen
(Advanced Surface Engineering and Nano Materials Research Center, Department of Electrical Engineering, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
905
ページ:
Null
発行年:
2022年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)