文献
J-GLOBAL ID:202202280797236018
整理番号:22A0968722
電子-サイクロトロン共鳴の水素プラズマ中の熱SiO_2処理により得られた非化学量論SiO_xにおける電荷輸送【JST・京大機械翻訳】
Charge Transport in Nonstoichiometric SiOx Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance
著者 (9件):
Iskhakzay R. M. Kh.
(Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia)
,
Kruchinin V. N.
(Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia)
,
Aliev V. Sh.
(Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia)
,
Aliev V. Sh.
(Novosibirsk State Technical University, Novosibirsk, Russia)
,
Gritsenko V. A.
(Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia)
,
Gritsenko V. A.
(Novosibirsk State University, Novosibirsk, Russia)
,
Gritsenko V. A.
(Novosibirsk State Technical University, Novosibirsk, Russia)
,
Dementieva E. V.
(Ioffe Physical Technical Institute, St. Petersburg, Russia)
,
Zamoryanskaya M. V.
(Ioffe Physical Technical Institute, St. Petersburg, Russia)
資料名:
Russian Microelectronics
(Russian Microelectronics)
巻:
51
号:
1
ページ:
24-35
発行年:
2022年
JST資料番号:
W4926A
ISSN:
1063-7397
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)