文献
J-GLOBAL ID:202202281983499079
整理番号:22A1100879
抵抗ランダムアクセスメモリ(RRAM)を持つ1トランジスタ1レジスタ素子におけるMax/Min計算に対する機能新論理【JST・京大機械翻訳】
A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)
著者 (10件):
Huang Wei-Chen
(Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Chen Po-Hsun
(Department of Applied Science, Republic of China Naval Academy, Kaohsiung, Taiwan)
,
Chang Ting-Chang
(Department of Physics and the Center of Crystal Research, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Zheng Hao-Xuan
(Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Yeh Yu-Hsuan
(Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Wu Chung-Wei
(Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Tan Yung-Fang
(Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Lin Shih-Kai
(Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan)
,
Wu Pei-Yu
(Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Sze Simon. M.
(Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
69
号:
4
ページ:
1811-1815
発行年:
2022年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)