文献
J-GLOBAL ID:202202282104671829
整理番号:22A0958368
2D PdSe_2薄膜の低圧CVD成長とPdSe_2-MoSe_2垂直ヘテロ構造への応用【JST・京大機械翻訳】
Low pressure CVD growth of 2D PdSe2 thin film and its application in PdSe2-MoSe2 vertical heterostructure
著者 (5件):
Withanage Sajeevi S
(NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, United States of America)
,
Withanage Sajeevi S
(Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America)
,
Khondaker Saiful I
(NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, United States of America)
,
Khondaker Saiful I
(Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America)
,
Khondaker Saiful I
(Department of Electrical & Computer Engineering, University of Central Florida, Orlando, FL 32816, United States of America)
資料名:
2D Materials
(2D Materials)
巻:
9
号:
2
ページ:
025025 (9pp)
発行年:
2022年
JST資料番号:
W5550A
ISSN:
2053-1583
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)