文献
J-GLOBAL ID:202202283054274326
整理番号:22A0233132
二次元遷移金属ジカルコゲナイドとそれらのヘテロ構造:トップダウンおよびボトムアップ合成アプローチにおけるプロセスパラメータの役割【JST・京大機械翻訳】
Two-dimensional transition metal dichalcogenides and their heterostructures: Role of process parameters in top-down and bottom-up synthesis approaches
著者 (6件):
Rani Sonam
(Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar, 125001, India)
,
Sharma Meenu
(Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar, 125001, India)
,
Verma Deepak
(Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar, 125001, India)
,
Ghanghass Anjali
(Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar, 125001, India)
,
Bhatia Ravi
(Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar, 125001, India)
,
Sameera I.
(Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar, 125001, India)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
139
ページ:
Null
発行年:
2022年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
文献レビュー
発行国:
イギリス (GBR)
言語:
英語 (EN)