文献
J-GLOBAL ID:202202284477845524
整理番号:22A0442246
効率的な太陽水素生産のためのSb_2Se_3/CdS光電陰極における高い開始ポテンシャルを可能にするヘテロ接合界面工学【JST・京大機械翻訳】
Heterojunction interface engineering enabling high onset potential in Sb2Se3/CdS photocathodes for efficient solar hydrogen production
著者 (10件):
Liang Guangxing
(Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, College of Materials Science and Engineering, Shenzhen University, Shen...)
,
Liu Tianxiang
(Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, College of Materials Science and Engineering, Shenzhen University, Shen...)
,
Ishaq Muhammad
(Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, College of Materials Science and Engineering, Shenzhen University, Shen...)
,
Chen Zejia
(Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, College of Materials Science and Engineering, Shenzhen University, Shen...)
,
Tang Rong
(Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, College of Materials Science and Engineering, Shenzhen University, Shen...)
,
Zheng Zhuanghao
(Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, College of Materials Science and Engineering, Shenzhen University, Shen...)
,
Su Zhenghua
(Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, College of Materials Science and Engineering, Shenzhen University, Shen...)
,
Fan Ping
(Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, College of Materials Science and Engineering, Shenzhen University, Shen...)
,
Zhang Xianghua
(Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226, Rennes F-35000, France)
,
Chen Shuo
(Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, College of Materials Science and Engineering, Shenzhen University, Shen...)
資料名:
Chemical Engineering Journal
(Chemical Engineering Journal)
巻:
431
号:
P3
ページ:
Null
発行年:
2022年
JST資料番号:
D0723A
ISSN:
1385-8947
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)