文献
J-GLOBAL ID:202202287761780722
整理番号:22A0553330
SiCパワーMOSFETのためのAl_2O_3/LaAlO_3/SiO_2ゲートスタックの静的性能と閾値電圧安定性改善【JST・京大機械翻訳】
Static Performance and Threshold Voltage Stability Improvement of Al2O3/LaAlO3/SiO2 Gate-Stack for SiC Power MOSFETs
著者 (7件):
Huang Linhua
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong)
,
Liu Yong
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong)
,
Peng Xin
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong)
,
Onozawa Yuichi
(Fuji Electric Company, Ltd, Matsumoto, Japan)
,
Tsuji Takashi
(Fuji Electric Company, Ltd, Matsumoto, Japan)
,
Fujishima Naoto
(Fuji Electric Company, Ltd, Matsumoto, Japan)
,
Sin Johnny K. O.
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
69
号:
2
ページ:
690-695
発行年:
2022年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)