文献
J-GLOBAL ID:202202287838120307
整理番号:22A0847645
(110)CナノドットHダイヤモンド上のMOSFET:ALD Al_2O_3/ダイヤモンド界面解析と高性能正規OFF動作実現【JST・京大機械翻訳】
MOSFETs on (110) C-H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization
著者 (9件):
Liu Benjian
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo, Japan)
,
Bi Te
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo, Japan)
,
Fu Yu
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo, Japan)
,
Kudara Ken
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo, Japan)
,
Imanishi Shoichiro
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo, Japan)
,
Liu Kang
(National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, China)
,
Dai Bing
(National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, China)
,
Zhu Jiaqi
(National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, China)
,
Kawarada Hiroshi
(Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo, Japan)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
69
号:
3
ページ:
949-955
発行年:
2022年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)