文献
J-GLOBAL ID:202202287992572190
整理番号:22A0919830
スパッタリングプロセスによる高移動度シリコン酸化インジウム薄膜トランジスタの作製【JST・京大機械翻訳】
High mobility silicon indium oxide thin-film transistor fabrication by sputtering process
著者 (7件):
Arulkumar S.
(Advanced Materials and Devices Laboratory, PSG Institute of Advanced Studies, Peelamedu, Coimbatore, 641004, India)
,
Parthiban S.
(Advanced Materials and Devices Laboratory, PSG Institute of Advanced Studies, Peelamedu, Coimbatore, 641004, India)
,
Kwon J.Y.
(School of Integrated Technology, Yonsei University, Incheon, 406-840, Republic of Korea)
,
Uraoka Y.
(Division of Materials Science, Graduate School of Science and Technology, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara, 630-0101, Japan)
,
Bermundo J.P.S.
(Division of Materials Science, Graduate School of Science and Technology, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara, 630-0101, Japan)
,
Mukherjee Arka
(Emerging Nanoelectronic Devices Research Laboratory (eNDR Lab), School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram (IISER TVM), Maruthamala PO, Vithura, Thiruvananthapuram, 695551, Kerala, India)
,
Das Bikas C.
(Emerging Nanoelectronic Devices Research Laboratory (eNDR Lab), School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram (IISER TVM), Maruthamala PO, Vithura, Thiruvananthapuram, 695551, Kerala, India)
資料名:
Vacuum
(Vacuum)
巻:
199
ページ:
Null
発行年:
2022年
JST資料番号:
E0347A
ISSN:
0042-207X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)