文献
J-GLOBAL ID:202202289128056738
整理番号:22A0553312
ソースゲートトランジスタと標準薄膜トランジスタ間の短チャネル効果の比較研究【JST・京大機械翻訳】
Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors
著者 (5件):
Wang Zhenze
(Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, China)
,
Luo Li
(Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, China)
,
Wang Yiming
(Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, China)
,
Zhang Jiawei
(State Key Laboratory of Crystal Materials, Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, China)
,
Song Aimin
(State Key Laboratory of Crystal Materials, Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
69
号:
2
ページ:
561-566
発行年:
2022年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)