文献
J-GLOBAL ID:202202289497721866
整理番号:22A0924753
歪多層カーボンナノチューブに基づくメモリスタ【JST・京大機械翻訳】
Memristors based on strained multi-walled carbon nanotubes
著者 (6件):
Il’ina Marina V.
(Southern Federal University, Institute of Nanotechnologies, Electronics and Equipment Engineering, Shevchenko St., 2, Taganrog 347922, Russian Federation)
,
Il’in Oleg I.
(Southern Federal University, Research Laboratory of Functional Nanomaterials Technology, Shevchenko St., 2, Taganrog 347922, Russian Federation)
,
Osotova Olga I.
(Southern Federal University, Research Laboratory of Functional Nanomaterials Technology, Shevchenko St., 2, Taganrog 347922, Russian Federation)
,
Smirnov Vladimir A.
(Southern Federal University, Institute of Nanotechnologies, Electronics and Equipment Engineering, Shevchenko St., 2, Taganrog 347922, Russian Federation)
,
Ageev Oleg A.
(Southern Federal University, Institute of Nanotechnologies, Electronics and Equipment Engineering, Shevchenko St., 2, Taganrog 347922, Russian Federation)
,
Ageev Oleg A.
(Southern Federal University, Research and Education Center “Nanotechnologies”, Shevchenko St., 2, Taganrog 347922, Russian Federation)
資料名:
Diamond and Related Materials
(Diamond and Related Materials)
巻:
123
ページ:
Null
発行年:
2022年
JST資料番号:
W0498A
ISSN:
0925-9635
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)