文献
J-GLOBAL ID:202202289618829387
整理番号:22A1113396
ゾル-ゲル誘導亜鉛スズ酸化物薄膜トランジスタの電気特性に及ぼすガンマ線照射の影響【JST・京大機械翻訳】
The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors
著者 (10件):
Wang S.
(Department of Electrical and Computer Engineering, Auburn University, Auburn, AL 36849, USA)
,
Uprety S.
(Department of Physics, Auburn University, Auburn, AL 36849, USA)
,
Mirkhani V.
(Department of Physics, Auburn University, Auburn, AL 36849, USA)
,
Hanggi D.
(Department of Physics, Auburn University, Auburn, AL 36849, USA)
,
Yapabandara K.
(Department of Physics, Auburn University, Auburn, AL 36849, USA)
,
Khanal M.P.
(Department of Physics, Auburn University, Auburn, AL 36849, USA)
,
Ahyi A.C.
(Department of Physics, Auburn University, Auburn, AL 36849, USA)
,
Hamilton M.C.
(Department of Electrical and Computer Engineering, Auburn University, Auburn, AL 36849, USA)
,
Sk M.H.
(Center for Advanced Materials, CAM, Qatar University, Doha 2713, Qatar)
,
Park M.
(Department of Physics, Auburn University, Auburn, AL 36849, USA)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
191
ページ:
Null
発行年:
2022年
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)