文献
J-GLOBAL ID:202202290321524818
整理番号:22A0434783
高真空その場アニーリングによるスパッタ蒸着Ga_2O_3膜の再結晶挙動,酸素空孔および光ルミネセンス性能【JST・京大機械翻訳】
Recrystallization behavior, oxygen vacancy and photoluminescence performance of sputter-deposited Ga2O3 films via high-vacuum in situ annealing
著者 (10件):
Wang Haiyan
(China-Ukraine Institute of Welding, Guangdong Academy of Sciences, Guangzhou, 510651, China)
,
Tang Chunmei
(Institute of New Materials, Guangdong Academy of Sciences, National Engineering Laboratory for Modern Materials Surface Engineering Technology, The Key Lab of Guangdong for Modern Surface Engineering Technology, Guangzhou, 510651, China)
,
Yang Weijia
(School of Applied Physics and Materials, Wuyi University, Jiangmen, 529020, China)
,
Zhao Jingjing
(China-Ukraine Institute of Welding, Guangdong Academy of Sciences, Guangzhou, 510651, China)
,
Zhao Jingjing
(School of Applied Physics and Materials, Wuyi University, Jiangmen, 529020, China)
,
Liu Lihua
(China-Ukraine Institute of Welding, Guangdong Academy of Sciences, Guangzhou, 510651, China)
,
Liu Lihua
(School of Applied Physics and Materials, Wuyi University, Jiangmen, 529020, China)
,
Mu Jianxun
(China-Ukraine Institute of Welding, Guangdong Academy of Sciences, Guangzhou, 510651, China)
,
Zhang Yupeng
(China-Ukraine Institute of Welding, Guangdong Academy of Sciences, Guangzhou, 510651, China)
,
Zeng Caiyou
(China-Ukraine Institute of Welding, Guangdong Academy of Sciences, Guangzhou, 510651, China)
資料名:
Ceramics International
(Ceramics International)
巻:
48
号:
3
ページ:
3481-3488
発行年:
2022年
JST資料番号:
H0705A
ISSN:
0272-8842
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)