文献
J-GLOBAL ID:202202291242156286
整理番号:22A0491338
超高スイッチング比を持つ非線形抵抗メモリ用の単結晶ハロゲン化物ペロブスカイト膜【JST・京大機械翻訳】
Single Crystal Halide Perovskite Film for Nonlinear Resistive Memory with Ultrahigh Switching Ratio
著者 (6件):
Li Lutao
(College of Energy, Soochow Institute for Energy and Materials Innovations, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215000, China)
,
Chen Yuan
(College of Energy, Soochow Institute for Energy and Materials Innovations, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215000, China)
,
Cai Changming
(Suzhou O-Light Optical Technology Co., Ltd., Suzhou, 215000, China)
,
Ma Peipei
(College of Energy, Soochow Institute for Energy and Materials Innovations, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215000, China)
,
Ji Huayong
(Suzhou O-Light Optical Technology Co., Ltd., Suzhou, 215000, China)
,
Zou Guifu
(College of Energy, Soochow Institute for Energy and Materials Innovations, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215000, China)
資料名:
Small
(Small)
巻:
18
号:
3
ページ:
e2103881
発行年:
2022年
JST資料番号:
W2348A
ISSN:
1613-6810
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)