文献
J-GLOBAL ID:202202299171065789
整理番号:22A0956691
SOIトンネルFETにおける界面トラップ感度に影響を与えるゲート電極の役割【JST・京大機械翻訳】
Role of gate electrode in influencing interface trap sensitivity in SOI tunnel FETs
著者 (5件):
Deb Deepjyoti
(Department of Electronics and Communication Engineering, School of Engineering, Tezpur University, Assam 784028, India)
,
Goswami Rupam
(Department of Electronics and Communication Engineering, School of Engineering, Tezpur University, Assam 784028, India)
,
Baruah Ratul Kr
(Department of Electronics and Communication Engineering, School of Engineering, Tezpur University, Assam 784028, India)
,
Saha Rajesh
(Department of Electronics and Communication Engineering, MNIT Jaipur, Jaipur, Rajasthan 302017, India)
,
Kandpal Kavindra
(Department of Electronics and Communication Engineering, IIIT Allahabad, Prayagraj, Uttar Pradesh 211015, India)
資料名:
Journal of Micromechanics and Microengineering
(Journal of Micromechanics and Microengineering)
巻:
32
号:
4
ページ:
044006 (15pp)
発行年:
2022年
JST資料番号:
W1424A
ISSN:
0960-1317
CODEN:
JMMIEZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)